微纳加工技术_工艺模块_STI 浅槽隔离

比眉伴天荒 2023-01-08 08:11 132阅读 0赞

# 工艺模块 #

### 文章目录 ###

*  工艺模块
 *   *  隔离
     *   *  LOCOS 隔离
         *  STI 浅槽隔离
         *  STI 制造流程
         *  完成图

## 隔离 ##

因为第一层布线有可能引起器件的反型，所以需要隔离；  
![在这里插入图片描述][watermark_type_ZmFuZ3poZW5naGVpdGk_shadow_10_text_aHR0cHM6Ly9ibG9nLmNzZG4ubmV0L3dlaXhpbl80NzEzOTY0OQ_size_16_color_FFFFFF_t_70]

### LOCOS 隔离 ###

![在这里插入图片描述][watermark_type_ZmFuZ3poZW5naGVpdGk_shadow_10_text_aHR0cHM6Ly9ibG9nLmNzZG4ubmV0L3dlaXhpbl80NzEzOTY0OQ_size_16_color_FFFFFF_t_70 1]  
氧化层一般500nm厚；22nm工艺的有源区一般也只有100nm的深度；  
![在这里插入图片描述][watermark_type_ZmFuZ3poZW5naGVpdGk_shadow_10_text_aHR0cHM6Ly9ibG9nLmNzZG4ubmV0L3dlaXhpbl80NzEzOTY0OQ_size_16_color_FFFFFF_t_70 2]

![在这里插入图片描述][watermark_type_ZmFuZ3poZW5naGVpdGk_shadow_10_text_aHR0cHM6Ly9ibG9nLmNzZG4ubmV0L3dlaXhpbl80NzEzOTY0OQ_size_16_color_FFFFFF_t_70 3]

### STI 浅槽隔离 ###

STI: Shallow Trench Insulation With CMP  
![在这里插入图片描述][watermark_type_ZmFuZ3poZW5naGVpdGk_shadow_10_text_aHR0cHM6Ly9ibG9nLmNzZG4ubmV0L3dlaXhpbl80NzEzOTY0OQ_size_16_color_FFFFFF_t_70 4]

### STI 制造流程 ###

1.  pad oxide两个作用： 缓解应力，形成包角；
2.  STI槽并不希望是90°垂直的，因为我们也希望侧壁可以离子注入；  
    ![在这里插入图片描述][watermark_type_ZmFuZ3poZW5naGVpdGk_shadow_10_text_aHR0cHM6Ly9ibG9nLmNzZG4ubmV0L3dlaXhpbl80NzEzOTY0OQ_size_16_color_FFFFFF_t_70 5]

![在这里插入图片描述][watermark_type_ZmFuZ3poZW5naGVpdGk_shadow_10_text_aHR0cHM6Ly9ibG9nLmNzZG4ubmV0L3dlaXhpbl80NzEzOTY0OQ_size_16_color_FFFFFF_t_70 6]  
![在这里插入图片描述][watermark_type_ZmFuZ3poZW5naGVpdGk_shadow_10_text_aHR0cHM6Ly9ibG9nLmNzZG4ubmV0L3dlaXhpbl80NzEzOTY0OQ_size_16_color_FFFFFF_t_70 7]

### 完成图 ###

![在这里插入图片描述][watermark_type_ZmFuZ3poZW5naGVpdGk_shadow_10_text_aHR0cHM6Ly9ibG9nLmNzZG4ubmV0L3dlaXhpbl80NzEzOTY0OQ_size_16_color_FFFFFF_t_70 8]

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